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MPF4392, MPF4393
Preferred Devices
JFET Switching Transistors
N-Channel - Depletion
Features
* Pb-Free Packages are Available*
MAXIMUM RATINGS
Rating Drain -Source Voltage Drain -Gate Voltag Gate-Source Voltage Forward Gate Current Total Device Dissipation @ TA = 25C Derate above 25C Operating and Storage Channel Temperature Range Symbol VDS VDG VGS IG(f) PD 350 2.8 Tchannel, Tstg -65 to +150 mW mW/C C
1 2 3
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2 SOURCE Value 30 30 30 50 Unit Vdc Vdc Vdc mAdc 1 DRAIN
3 GATE
Maximum ratings are those values beyond which device damage can occur. Maximum ratings applied to the device are individual stress limit values (not normal operating conditions) and are not valid simultaneously. If these limits are exceeded, device functional operation is not implied, damage may occur and www..com reliability may be affected.
TO-92 (TO-226AA) CASE 29-11 STYLE 5
MARKING DIAGRAM
MPF 439x AYWW G G
MPF439x = Device Code x = 2 or 3 A = Assembly Location Y = Year WW = Work Week G = Pb-Free Package (Note: Microdot may be in either location)
ORDERING INFORMATION
Device MPF4392 MPF4392G MPF4393 MPF4393G MPF4393RLRP MPF4393RLRPG *For additional information on our Pb-Free strategy and soldering details, please download the ON Semiconductor Soldering and Mounting Techniques Reference Manual, SOLDERRM/D.
(c) Semiconductor Components Industries, LLC, 2006
Package TO-92 TO-92 (Pb-Free) TO-92 TO-92 (Pb-Free) TO-92 TO-92 (Pb-Free)
Shipping 1000 Units / Bulk 1000 Units / Bulk 1000 Units / Bulk 1000 Units / Bulk 1000 / Ammo Box 1000 / Ammo Box
Preferred devices are recommended choices for future use and best overall value.
1
January, 2006 - Rev. 5
Publication Order Number: MPF4392/D
MPF4392, MPF4393
ELECTRICAL CHARACTERISTICS (TA = 25C unless otherwise noted)
Characteristic OFF CHARACTERISTICS Gate -Source Breakdown Voltage (IG = 1.0 mAdc, VDS = 0) Gate Reverse Current (VGS = 15 Vdc, VDS = 0) (VGS = 15 Vdc, VDS = 0, TA = 100C) Drain-Cutoff Current (VDS = 15 Vdc, VGS = 12 Vdc) (VDS = 15 Vdc, VGS = 12 Vdc, TA = 100C) Gate Source Voltage (VDS = 15 Vdc, ID = 10 nAdc) ON CHARACTERISTICS Zero -Gate -Voltage Drain Current (Note 1) (VDS = 15 Vdc, VGS = 0) Drain-Source On-Voltage (ID = 6.0 mAdc, VGS = 0) (ID = 3.0 mAdc, VGS = 0) Static Drain-Source On Resistance (ID = 1.0 mAdc, VGS = 0) SMALL- SIGNAL CHARACTERISTICS Forward Transfer Admittance (VDS = 15 Vdc, ID = 25 mAdc, f = 1.0 kHz) (VDS = 15 Vdc, ID = 5.0 mAdc, f = 1.0 kHz) Drain-Source "ON" Resistance (VGS = 0, ID = 0, f = 1.0 kHz) Input Capacitance (VGS = 15 Vdc, VDS = 0, f = 1.0 MHz) Reverse Transfer Capacitance (VGS = 12 Vdc, VDS = 0, f = 1.0 MHz) (VDS = 15 Vdc, ID = 10 mAdc, f = 1.0 MHz) SWITCHING CHARACTERISTICS Rise Time (See Figure 2) (ID(on) = 6.0 mAdc) (ID(on) = 3.0 mAdc) Fall Time (See Figure 4) (VGS(off) = 7.0 Vdc) (VGS(off) = 5.0 Vdc) Turn-On Time (See Figures 1 and 2) (ID(on) = 6.0 mAdc) (ID(on) = 3.0 mAdc) Turn-Off Time (See Figures 3 and 4) (VGS(off) = 7.0 Vdc) (VGS(off) = 5.0 Vdc) 1. Pulse Test: Pulse Width v 300 ms, Duty Cycle v 3.0%. tr MPF4392 MPF4393 tf MPF4392 MPF4393 ton MPF4392 MPF4393 toff MPF4392 MPF4393 - - 20 37 35 55 - - 4.0 6.5 15 15 ns - - 15 29 20 35 ns - - 2.0 2.5 5.0 5.0 ns ns |yfs| MPF4392 MPF4393 rds(on) MPF4392 MPF4393 Ciss Crss - - 2.5 3.2 3.5 - - - - - - 6.0 60 100 10 pF pF - - 17 12 - - W mmhos IDSS MPF4392 MPF4393 VDS(on) MPF4392 MPF4393 rDS(on) MPF4392 MPF4393 - - - - 60 100 - - - - 0.4 0.4 W 25 5.0 - - 75 30 Vdc mAdc MPF4392 MPF4393 V(BR)GSS 30 IGSS - - ID(off) - - VGS -2.0 -0.5 - - -5.0 -3.0 - - 1.0 0.1 nAdc mAdc Vdc - - 1.0 0.2 nAdc mAdc - - Vdc Symbol Min Typ Max Unit
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MPF4392, MPF4393
TYPICAL SWITCHING CHARACTERISTICS
1000 t d(on), TURN-ON DELAY TIME (ns) 500 200 100 50 20 10 5.0 2.0 1.0 0.5 0.7 1.0 5.0 7.0 10 2.0 3.0 ID, DRAIN CURRENT (mA) 20 30 50 RK = 0 RK = RD TJ = 25C MPF4392 VGS(off) = 7.0 V MPF4393 = 5.0 V 1000 500 200 t r , RISE TIME (ns) 100 50 20 10 5.0 2.0 1.0 0.5 0.7 1.0 5.0 7.0 10 2.0 3.0 ID, DRAIN CURRENT (mA) 20 30 50 RK = 0 RK = RD TJ = 25C MPF4392 VGS(off) = 7.0 V MPF4393 = 5.0 V
Figure 1. Turn-On Delay Time
1000 t d(off) , TURN-OFF DELAY TIME (ns) 500 200 100 50 20 10 5.0 2.0 1.0 0.5 0.7 1.0 2.0 3.0 5.0 7.0 10 ID, DRAIN CURRENT (mA) 20 30 50 RK = 0 RK = RD TJ = 25C MPF4392 VGS(off) = 7.0 V MPF4393 = 5.0 V 1000 500 200 t f , FALL TIME (ns) 100 50 20 10 5.0 2.0 1.0 0.5 0.7 1.0
Figure 2. Rise Time
TJ = 25C RK = RD MPF4392 VGS(off) = 7.0 V MPF4393 = 5.0 V
RK = 0
2.0 3.0 5.0 7.0 10 ID, DRAIN CURRENT (mA)
20
30
50
Figure 3. Turn-Off Delay Time
Figure 4. Fall Time
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3
MPF4392, MPF4393
NOTE 1 VDD RD SET VDS(off) = 10 V INPUT RGEN 50 W VGEN 50 W RK RGG VGG RT
50 W
INPUT PULSE tr 0.25 ns tf 0.5 ns PULSE WIDTH = 2.0 ms DUTY CYCLE 2.0%
RGG & RK RD = RD(RT + 50) RD + RT + 50
Figure 5. Switching Time Test Circuit
The switching characteristics shown above were measured using a test circuit similar to Figure 5. At the beginning of the switching interval, the gate voltage is at Gate Supply Voltage (-VGG). The Drain-Source Voltage (VDS) is slightly lower than Drain Supply Voltage (VDD) due to the voltage divider. Thus Reverse Transfer Capacitance (Crss) or Gate-Drain Capacitance (Cgd) is charged to VGG + VDS. During the turn-on interval, Gate-Source Capacitance (Cgs) OUTPUT discharges through the series combination of RGen and RK. Cgd must discharge to VDS(on) through RG and RK in series with the parallel combination of effective load impedance (RD) and Drain-Source Resistance (rds). During the turn-off, this charge flow is reversed. Predicting turn-on time is somewhat difficult as the channel resistance rds is a function of the gate-source voltage. While Cgs discharges, VGS approaches zero and rds decreases. Since Cgd discharges through rds, turn-on time is non-linear. During turn-off, the situation is reversed with rds increasing as Cgd charges. The above switching curves show two impedance conditions: 1) RK is equal to RD which simulates the switching behavior of cascaded stages where the driving source impedance is normally the load impedance of the previous stage, and 2) RK = 0 (low impedance) the driving source impedance is that of the generator.
15
y fs , FORWARD TRANSFER ADMITTANCE (mmhos)
20 MPF4392 10 7.0 5.0 MPF4393 C, CAPACITANCE (pF)
10 Cgs 7.0 5.0 Tchannel = 25C (Cds IS NEGLIGIBLE) Cgd
Tchannel = 25C VDS = 15 V
3.0 2.0 0.5 0.7 1.0
3.0 2.0 1.5
2.0 3.0 5.0 7.0 10 ID, DRAIN CURRENT (mA)
20
30
50
1.0 0.03 0.05
0.1
0.3 0.5 1.0 3.0 5.0 VR, REVERSE VOLTAGE (VOLTS)
10
30
Figure 6. Typical Forward Transfer Admittance
200 rds(on) , DRAIN-SOURCE ON-STATE RESISTANCE (OHMS) 2.0 rds(on) , DRAIN-SOURCE ON-STATE RESISTANCE (NORMALIZED) 25 mA 50 mA 75 mA 100 mA 125 mA 1.8 1.6 1.4 1.2 1.0 0.8 0.6 0.4 -70 -40
Figure 7. Typical Capacitance
IDSS = 10 160 mA
ID = 1.0 mA VGS = 0
120
80
40 Tchannel = 25C 0 0 1.0 2.0 3.0 4.0 5.0 6.0 VGS, GATE-SOURCE VOLTAGE (VOLTS) 7.0
8.0
-10 20 50 80 110 Tchannel, CHANNEL TEMPERATURE (C)
140
170
Figure 8. Effect of Gate-Source Voltage On Drain-Source Resistance http://onsemi.com
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Figure 9. Effect of Temperature On Drain-Source On-State Resistance
MPF4392, MPF4393
100 r ds(on), DRAIN-SOURCE ON-STATE RESISTANCE (OHMS) 90 80 70 60 50 40 30 20 10 0 VGS(off) rDS(on) @ VGS = 0 Tchannel = 25C 10 9.0 V GS , GATE-SOURCE VOLTAGE (VOLTS) 8.0 7.0 6.0 5.0 4.0 3.0 2.0 1.0 0 10 20 30 40 50 60 70 80 90 100 110 120 130 140 150 IDSS, ZERO-GATE VOLTAGE DRAIN CURRENT (mA) NOTE 2
Figure 10. Effect of IDSS On Drain-Source Resistance and Gate-Source Voltage
The Zero-Gate-Voltage Drain Current (IDSS), is the principle determinant of other J-FET characteristics. Figure 10 shows the relationship of Gate-Source Off Voltage (VGS(off)) and Drain-Source On Resistance (rds(on)) to IDSS. Most of the devices will be within 10% of the values shown in Figure 10. This data will be useful in predicting the characteristic variations for a given part number. For example: Unknown rds(on) and VGS range for an MPF4392 The electrical characteristics table indicates that an MPF4392 has an IDSS range of 25 to 75 mA. Figure 10 shows rds(on) = 52 W for IDSS = 25 mA and 30 W for IDSS 75 mA. The corresponding VGS values are 2.2 V and 4.8 V.
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5
MPF4392, MPF4393
PACKAGE DIMENSIONS
TO-92 (TO-226) CASE 29-11 ISSUE AL
A R P L
SEATING PLANE
B
NOTES: 1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M, 1982. 2. CONTROLLING DIMENSION: INCH. 3. CONTOUR OF PACKAGE BEYOND DIMENSION R IS UNCONTROLLED. 4. LEAD DIMENSION IS UNCONTROLLED IN P AND BEYOND DIMENSION K MINIMUM. DIM A B C D G H J K L N P R V INCHES MIN MAX 0.175 0.205 0.170 0.210 0.125 0.165 0.016 0.021 0.045 0.055 0.095 0.105 0.015 0.020 0.500 --- 0.250 --- 0.080 0.105 --- 0.100 0.115 --- 0.135 --- MILLIMETERS MIN MAX 4.45 5.20 4.32 5.33 3.18 4.19 0.407 0.533 1.15 1.39 2.42 2.66 0.39 0.50 12.70 --- 6.35 --- 2.04 2.66 --- 2.54 2.93 --- 3.43 ---
K
XX G H V
1
D J C SECTION X-X N N
STYLE 5: PIN 1. DRAIN 2. SOURCE 3. GATE
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MPF4392/D

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